New substrate for GaN film Typical Properties
Purity Wt %. Impurity: |
99.99
Mg:<.0005 Al:<.0030 Si: 0.00з0 Тi:.0010 Cu: < .00з0 Fe:< 0.005 Ca: <0005 Ag: < .0002 |
Crystal Structure |
Hexagonal: a= 3.252 , c = 5.313 |
Gowth Method |
Hydrothermal |
Hardiness |
4 moh scale |
Density |
5.7 g/cm3 |
Melt Point |
1975°C |
Specific heat |
0.125ca1/gm |
Thermoelectric Constant |
1200nV/°C@300°C |
Thermal conductivity |
0.006 cal/cm/°C |
Thermal expansion |
2.90x 10-6/°K |
Transmission range |
0.4 — 0.6 u > 50% at 2 mm |
Dislocation Density |
<0001> plane < 100 /cm2 |
Availability of Standard Substrate |
|
Orientation |
<0001>+/-0.5° |
Polished surface |
EPI polished on one side or two sides to Ra < 15 A |
Thickness |
0.5 mm |
Standard Size |
5×5 mm 10×10 mm 20×20 mm |