ZnO Single Crystal Substrate

New substrate for GaN film Typical Properties

Purity Wt %.

Impurity:

99.99

Mg:<.0005         Al:<.0030     Si: 0.00з0 Тi:.0010        Cu: < .00з0 Fe:< 0.005 Ca: <0005            Ag: < .0002

Crystal Structure

Hexagonal: a= 3.252  , c = 5.313

Gowth Method

Hydrothermal

Hardiness

4 moh scale

Density

5.7 g/cm3

Melt Point

1975°C

Specific heat

0.125ca1/gm

Thermoelectric Constant

1200nV/°C@300°C

Thermal conductivity

0.006 cal/cm/°C

Thermal expansion

2.90x 10-6/°K

Transmission range

0.4 — 0.6 u > 50% at 2 mm

Dislocation Density

<0001> plane < 100 /cm2

Availability of Standard Substrate

Orientation

<0001>+/-0.5°

Polished surface

EPI polished on one side or two sides to Ra < 15 A

Thickness

0.5 mm

Standard Size

5×5 mm 10×10 mm 20×20 mm